Electronic and optoelectronic characterization

Electronic and optoelectronic characterization techniques are useful for both fundamental and application level investigations of (mainly) disordered materials – polycrystalline, amorphous and organic metals, semiconductors and insulators. The fundamental level consists of a determination of the electronic structure (energies of conduction and valence bands, energy gap and doping levels) and charge fotogeneration, transport and recombination in the materials under study. The application level of the method consists of semiconductor device characterization, e. g. rectifying and electroluminescent diodes, solar cells, field effect transistors and sensors.

Contact: Assoc. Prof. Ivaylo Zhivkov, Ph.D.


Key instruments

The majority of the equipments fulfill the specific requirements for low voltage (nano- and microvolts) and low current (from the level of hundred femtoampers) electrical measurements. The experimental setups are predominantly computer controlled, which facilitates and precise the measurement. The characterization can be performed under vacuum to prevent device degradation.

The staff is not only experienced in performing the measurement but also development of both hardware and software of the devices. In this way specific customer requirements could be fulfilled.

  • Photoconductivity (spectraly and time resolved) characterization
  • Solar simulator (class AAA) with complete solar cells characterization (LotOriel)
  • Electroluminescence – integral and spectrally resolved
  • Current - voltage characterization aparatus
  • Temperature-modulated space-charge limited current spectroscopy (TM-SCLC) (under construction)
  • 4 – point resistivity measuring equipment
  • Organic field effect transistor (OFET) characterization